TIP Series NPN PNP Power Amplifier Darlington Transistor TIP31-TIP2955 TO-220

Models:

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 40 W
• Maximum Collector-Base Voltage |Vcb|: 140 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 3 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 20
• Noise Figure, dB: –
• Package: TO220

TIP35C:

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 90 W
• Maximum Collector-Base Voltage |Vcb|: 140 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 25 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 20
• Noise Figure, dB: –
• Package: TOP3

TIP42C:

• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage |Vcb|: 140 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 6 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 20
• Noise Figure, dB: –
• Package: TO220

TIP120:

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage |Vcb|: 60 V
• Maximum Collector-Emitter Voltage |Vce|: 60 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 5 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 1000
• Noise Figure, dB: –
• Package: TO220

TIP122:

• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 5 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 1000
• Noise Figure, dB: –
• Package: TO220

TIP127:

• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 65 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 5 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 1000
• Noise Figure, dB: –
• Package: TO220

TIP147:

• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 125 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 10 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 500
• Noise Figure, dB: –
• Package: TO218

TIP2955:

• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 90 W
• Maximum Collector-Base Voltage |Vcb|: 100 V
• Maximum Collector-Emitter Voltage |Vce|: 70 V
• Maximum Emitter-Base Voltage |Veb|: 7 V
• Maximum Collector Current |Ic max|: 15 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 20
• Noise Figure, dB: –
• Package: TO218