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TIP Series NPN PNP Power Amplifier Darlington Transistor TIP31-TIP2955 TO-220

£2.37£6.97

Clear

Models:

TIP31C, TIP35C, TIP42C, TIP120, TIP122, TIP127, TIP147, TIP2955

Package include

1/5/10 pcs from the chosen model

TIP31C:

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 140 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 3 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Noise Figure, dB: –
  • Package: TO220

TIP35C:

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 90 W
  • Maximum Collector-Base Voltage |Vcb|: 140 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 25 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Noise Figure, dB: –
  • Package: TOP3

TIP42C:

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 65 W
  • Maximum Collector-Base Voltage |Vcb|: 140 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 6 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Noise Figure, dB: –
  • Package: TO220

TIP120:

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 65 W
  • Maximum Collector-Base Voltage |Vcb|: 60 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 5 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Forward Current Transfer Ratio (hFE), MIN: 1000
  • Noise Figure, dB: –
  • Package: TO220

TIP122:

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 65 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 5 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Forward Current Transfer Ratio (hFE), MIN: 1000
  • Noise Figure, dB: –
  • Package: TO220

TIP127:

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 65 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 5 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Forward Current Transfer Ratio (hFE), MIN: 1000
  • Noise Figure, dB: –
  • Package: TO220

TIP147:

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 125 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 10 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Forward Current Transfer Ratio (hFE), MIN: 500
  • Noise Figure, dB: –
  • Package: TO218

TIP2955:

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 90 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 70 V
  • Maximum Emitter-Base Voltage |Veb|: 7 V
  • Maximum Collector Current |Ic max|: 15 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Noise Figure, dB: –
  • Package: TO218
Mounting Style

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SKU: EPXtipt22xx Category: