Models:
J111, J113
Package include
1 / 5 / 10 pcs from the needed part as you chosen
Datasheets:
J111:
- Technology: Si
- Type: JFET
- Mounting Style: Through Hole
- Package/Case: TO-92-3
- Transistor Polarity: N-Channel
- Vgs – Gate-Source Breakdown Voltage: – 35 V
- Drain-Source Current at Vgs=0: 20 mA
- Rds On – Drain-Source Resistance: 30 Ohms
- Pd – Power Dissipation: 360 mW
- Gate-Source Cut-off Voltage: – 10 V
J113:
- Type: JFET
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-92-3
- Transistor Polarity: N-Channel
- Vgs – Gate-Source Breakdown Voltage: – 35 V
- Drain-Source Current at Vgs=0: 2 mA
- Rds On – Drain-Source Resistance: 100 Ohms
- Pd – Power Dissipation: 360 mW
- Gate-Source Cut-off Voltage: – 3 V
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