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J111 / J113 -35V -3Vds 50mA 360mW N-Channel JFET Transistor TO-92-3

£2.27

Clear

Models:

J111, J113

Package include

1 / 5 / 10 pcs from the needed part as you chosen

Datasheets:

J111:

  • Technology: Si
  • Type: JFET
  • Mounting Style: Through Hole
  • Package/Case: TO-92-3
  • Transistor Polarity: N-Channel
  • Vgs – Gate-Source Breakdown Voltage: – 35 V
  • Drain-Source Current at Vgs=0: 20 mA
  • Rds On – Drain-Source Resistance: 30 Ohms
  • Pd – Power Dissipation: 360 mW
  • Gate-Source Cut-off Voltage: – 10 V

J113:

  • Type: JFET
  • Technology: Si
  • Mounting Style: Through Hole
  • Package/Case: TO-92-3
  • Transistor Polarity: N-Channel
  • Vgs – Gate-Source Breakdown Voltage: – 35 V
  • Drain-Source Current at Vgs=0: 2 mA
  • Rds On – Drain-Source Resistance: 100 Ohms
  • Pd – Power Dissipation: 360 mW
  • Gate-Source Cut-off Voltage: – 3 V
Mounting Style

Number of Pins

Type

Maximum DC Collector Current

MPN

Brand

Maximum Power Dissipation

Transistor Type

Package/Case

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SKU: EPXjserto92xx Category: