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FQP30N06 P30N06 N-Channel Enhancement Mode MOSFET 60V 30A TO-220

£2.37£4.37

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ULN2003AN:

  • Technology: Si
  • Mounting Style: Through Hole
  • Package/Case: TO-220-3
  • Transistor Polarity: N-Channel
  • Vds – Drain-Source Breakdown Voltage: 60 V
  • Id – Continuous Drain Current: 30 A
  • Rds On – Drain-Source Resistance: 40 mOhms
  • Vgs – Gate-Source Voltage: 25 V
  • Minimum Operating Temperature: – 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd – Power Dissipation: 79 W
  • Channel Mode: Enhancement
  • Transistor Type: 1 N-Channel
  • Type: MOSFET
  • Forward Transconductance – Min: 16 S
  • Fall Time: 40 ns
  • Rise Time: 85 ns
  • Typical Turn-Off Delay Time: 35 ns
  • Typical Turn-On Delay Time: 10 ns

Package include

1 / 5 / 10 pcs as you chosen
MPN

Function

Series

Minimum Operating Temperature

Number of Elements per Chip

Maximum Operating Temperature

Model

Transistor Type

Number of Pins

Brand

Mounting Style

Package/Case

Type

QTY

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SKU: EPXfqp30n06xx Category: