FQP30N06 P30N06 N-Channel Enhancement Mode MOSFET 60V 30A TO-220
£2.37 – £4.37
ULN2003AN:
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-220-3
- Transistor Polarity: N-Channel
- Vds – Drain-Source Breakdown Voltage: 60 V
- Id – Continuous Drain Current: 30 A
- Rds On – Drain-Source Resistance: 40 mOhms
- Vgs – Gate-Source Voltage: 25 V
- Minimum Operating Temperature: – 55 C
- Maximum Operating Temperature: + 175 C
- Pd – Power Dissipation: 79 W
- Channel Mode: Enhancement
- Transistor Type: 1 N-Channel
- Type: MOSFET
- Forward Transconductance – Min: 16 S
- Fall Time: 40 ns
- Rise Time: 85 ns
- Typical Turn-Off Delay Time: 35 ns
- Typical Turn-On Delay Time: 10 ns
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