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2N Series NPN PNP General Bipolar N-FET Transistor TO-92 2N2222 – 2N7000

2N Series NPN PNP General Bipolar N-FET Transistor TO-92 2N2222 – 2N7000

£0.99 – £14.27

NPN general purpose transistors, especially suited for use in driver stages of audio
amplifiers, low noise input stages of tape recorders, HI-FI amplifiers, signal processing circuits of television receivers.

Models:

2N2222, 2N2907, 2N3819, 2N3904, 2N3906, 2N4401, 2N4403, 2N5401, 2N5458, 2N5484, 2N5551, 2N6027, 2N7000

Package include

1/5/10/20/50/100 pcs from the chosen type

2N2222:

  • Bi-Polar high current NPN Transistor
  • DC Current Gain (hFE) is 100
  • Continuous Collector current (IC) is 800mA
  • Emitter Base Voltage (VBE) is 6V
  • Collector Emitter Voltage (VCE) is 30V
  • Base Current(IB) is 5mA maximum

2N2907:

  • Having a high value of current (max. 600 mA)
  • Low voltage value (max. 40 V)
  • These are Lead (Pb) free devices
  • Collector to Emitter voltage (VCEO) is 40v (max.)
  • Collector to Base voltage (VCBO) is 60v (max.)
  • Emitter to Base voltage(VEBO) is 5v (normally)
  • Maximum value of Collector current is 600mA
  • Power dissipation at ambient temperature is about 400mW
  • Having DC current gain (hfe) of 100 to 300 (max.)
  • Temperature of operation and storage is -65 to +150 °C

2N3819:

  • Transistor Type: JFET – N Type Channel
  • Vds (Drain-Source Voltage): 25 VDC
  • Vdg (Drain-Gate Voltage): 25 VDC
  • Vgs (Gate-Source Voltage): 25 VDC
  • Igf – (Forward Gate Current): 10 mA
  • Power: 350 mW
  • On Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0

2N3904:

  • Bi-Polar NPN Transistor
  • DC Current Gain (hFE) is 300 maximum
  • Continuous Collector current (IC) is 200mA
  • Base- Emitter Voltage (VBE) is 6V
  • Collector-Emitter Voltage (VCE) is 40V
  • Collector-Base Voltage (VCB) is 60V

2N3906:

  • Bi-Polar PNP Transistor
  • DC Current Gain (hFE) is 300 maximum
  • Continuous Collector current (IC) is 200mA
  • Emitter Base Voltage (VBE) is 5V
  • Base Current(IB) is 5mA maximum
  • Collector Emitter Voltage (VCE) is 40V
  • Collector Base Voltage (VCB) is 40V

2N4401:

  • General purpose NPN Transistor
  • High DC Current Gain (hFE), typically 80 when IC=10mA
  • Continuous Collector current (IC) is 500mA
  • Collector-Emitter voltage (VCE) is 40 V
  • Collector-Base voltage (VCB) is 60V
  • Emitter Base Breakdown Voltage (VBE) is 6V
  • Transition Frequency is 100MHz

2N4403:

  • Silicon planar epitaxial transistor
  • Pb−free packages are available
  • With  DC Current Gain (hFE) up to 300
  • Maximum voltage across collector and emitter: 40V
  • Maximum current allowed trough collector: 600mA
  • Maximum voltage across collector and base: 40 V
  • Maximum current allowed trough base: 50mA
  • Maximum voltage across base and emitter: 5V
  • Operating temperature range: -55ºC to +150ºC
  • Maximum power dissipation : 0.31 W

2N5401:

  • Available in Pb−Free package
  • High collector breakdown voltage
  • With  DC Current Gain (hFE) up to 100
  • Maximum voltage across collector and emitter: 150V
  • Maximum current allowed trough collector: 600mA
  • Maximum voltage across collector and base: 160 V
  • Maximum voltage across base and emitter: 5V
  • Operating temperature range: -55ºC to +150ºC
  • Maximum power dissipation : 0.62 W

2N5458:

  • N-Channel JFET
  • Max Drain-Source Voltage (VDS) is 25V
  • Max Gate-Source Voltage (VGS) is 3.5V
  • Drai Current (ID) is 9mA
  • Total Device Dissipation (25°C) (PD) is 625mW
  • Operating Temperature -65 to +150°C

2N5459:

  • FET Type: N-Channel
  • Voltage – Breakdown (V(BR)GSS): 25V
  • Current – Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Voltage – Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) @ Vds: 7pF @ 15V
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Power – Max: 625mW

 

2N5484:

  • JFET VHF/UHF Amplifier
  • N-Channel
  • Drain-Gate Voltage (VDG) is 25V
  • Reverse Gate-Source Voltage (VGSR) is 25V
  • Drai Current (ID) is 30mA
  • Forward Drain Current (IGF) is 10mA
  • Total Device Dissipation (25°C) (PD) is 350mW (2.8mW/°C)
  • Operating Temperature -65 to +150°C

2N5551:

  • Amplifier NPN Transistor
  • High DC Current Gain (hFE), typically 80 when IC=10mA
  • Continuous Collector current (IC) is 600mA
  • Collector-Emitter voltage (VCE) is 160 V
  • Collector-Base voltage (VCB) is 180V
  • Emitter Base Voltage (VBE) is 6V
  • Transition Frequency is 100MHz

2N6027:

 

  • Si Programmable Unijunction Transistor
  • Gate-Cathode Forward Voltage (VGKF) is 40V
  • Gate-Cathode Reverse Voltage (VGKR) is 5V
  • Gate-Anode Reverse Voltage (VGAR) is 40V
  • Anode-Cathode Voltage (VAK) is 40V
  • Peak Non-Repetitive Forward Current (t=10us) (ITSM) is 5A
  • DC Forward Anode Current (IT) is 150mA
  • DC Gate Current (IG) is 50mA
  • Power Dissipation (PD) is 300mW
  • Operating Junction Temperature (TJ) is -50 to +100°C

2N7000:

  • Small signal N-Channel MOSFET
  • Drain-Source Voltage (VDS) is 60V
  • Continuous Drain Current (ID) is 200mA
  • Pulsed Drain Current (ID-peak) is 500mA
  • Gate threshold voltage (VGS-th) is 3V
  • Gate-Source Voltage is (VGS) is ±20V
  • Turn ON and Turn off time is 10ns each.
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SKU: EPX2nt9xx Category:

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