Number of Pins: 3
Showing all 6 results
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2N Series NPN PNP General Bipolar N-FET Transistor TO-92 2N2222 – 2N7000
£0.99 – £14.27Select optionsNPN general purpose transistors, especially suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, HI-FI amplifiers, signal processing circuits of television receivers. Models: 2N2222, 2N2907, 2N3819, 2N3904, 2N3906, 2N4401, 2N4403, 2N5401, 2N5458, 2N5484, 2N5551, 2N6027, 2N7000 Package include 1/5/10/20/50/100 pcs from the chosen type 2N2222: Bi-Polar high current …
2N Series NPN PNP General Bipolar N-FET Transistor TO-92 2N2222 – 2N7000Read More
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IRF540N IRFZ44N TO-220 IRFW644B TO-263 N-Channel MOSFET Power Transistor
£3.97 – £6.27Select optionsModels: IRF540N, IRFZ44N, IRFW644B Package include 1/2/3/5/10 pcs from the chosen model IRF540N: Small signal N-Channel MOSFET Continuous Drain Current (ID) is 33A at 25°C Pulsed Drain Current (ID-peak) is 110A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V Maximum Drain-Source Voltage (VDS) is …
IRF540N IRFZ44N TO-220 IRFW644B TO-263 N-Channel MOSFET Power TransistorRead More
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TIP Series NPN PNP Power Amplifier Darlington Transistor TIP31-TIP2955 TO-220
£2.37 – £6.97Select optionsModels: TIP31C, TIP35C, TIP42C, TIP120, TIP122, TIP127, TIP147, TIP2955 Package include 1/5/10 pcs from the chosen model TIP31C: Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 140 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 3 …
TIP Series NPN PNP Power Amplifier Darlington Transistor TIP31-TIP2955 TO-220Read More
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J111 / J113 -35V -3Vds 50mA 360mW N-Channel JFET Transistor TO-92-3
£2.27Select optionsModels: J111, J113 Package include 1 / 5 / 10 pcs from the needed part as you chosen Datasheets: J111: Technology: Si Type: JFET Mounting Style: Through Hole Package/Case: TO-92-3 Transistor Polarity: N-Channel Vgs – Gate-Source Breakdown Voltage: – 35 V Drain-Source Current at Vgs=0: 20 mA Rds On – Drain-Source Resistance: 30 Ohms Pd …
J111 / J113 -35V -3Vds 50mA 360mW N-Channel JFET Transistor TO-92-3Read More
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FQP30N06 P30N06 N-Channel Enhancement Mode MOSFET 60V 30A TO-220
£2.37 – £4.37Select optionsULN2003AN: Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Vds – Drain-Source Breakdown Voltage: 60 V Id – Continuous Drain Current: 30 A Rds On – Drain-Source Resistance: 40 mOhms Vgs – Gate-Source Voltage: 25 V Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 175 C Pd – Power Dissipation: …
FQP30N06 P30N06 N-Channel Enhancement Mode MOSFET 60V 30A TO-220Read More